Zener Diode

Zener Diode: Construction, Working, VI Characteristic, and Specification

The Zener diode is a special kind of heavily doped PN junction diode designed to conduct in reverse the reverse direction when a certain specified voltage reached. It is a…

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Types of Diodes

Types of Diodes

The diode is a semiconductor device which allows the current to flow in one direction. Therefore, this device is also known as the unidirectional semiconductor device. In this article, we…

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Gate Turn-Off Thyristor

Gate Turn-Off Thyristor

The Gate Turn-Off Thyristor is also a device from the Thyristor family. The ordinary thyristor is not a fully controlled switch. It can be turned ON by gate but cannot…

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Silicon Controlled Rectifier (SCR): Structure, Symbol, and Working

Silicon Controlled Rectifier (SCR): Structure, Symbol, and Working

The semiconductor diode was an antecedent to thyristors. The modern power electronics truly started after the emergence of the thyristors. The concept of the thyristor introduced in 1956 by J.L….

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Rectifier_ Types, Application, Circuit Diagram and Waveform in MATLAB

Rectifier: Types, Application, Circuit Diagram and Waveform in MATLAB

The rectifier is a device which used to convert the alternating current (AC) into the direct current (DC). A Power diode used as a power electronic switch. A diode allows…

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Insulated Gate Bipolar Transistor - IGBT

Insulated Gate Bipolar Transistor – IGBT

Insulated Gate Bipolar Transistor is known as IGBT. The IGBT is a combination of two power electronics devices that is MOSFET and BJT. MOSFET has high-speed switching characteristic and BJT has…

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DIAC | Construction, Working and I-V characteristic

DIAC: Construction, Working and I-V characteristic

DIAC means DIode Alternating Current. Generally, DIAC uses to trigger the TRIAC. Sometimes it is also known as a TRIAC without GATE terminal. The DIAC is nothing but the combination…

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Power MOSFET: Construction, Operation, and I-V characteristic

Power MOSFET: Construction, Operation, and I-V characteristic

MOSFET is a three-terminal device. The terminals are Drain, Source and Gate. MOSFET is a short form of Metal Oxide Semiconductor Field Effect Transistor. This device is capable of switching at…

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Power BJT: Application, Construction, and I-V characteristics

Power BJT : Application, Construction, and I-V characteristics

The power bipolar junction transistor (BJT) blocks a high voltage in the off state and high current carrying capacity in the on-state. The power handling capacity is very high. Application…

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Power Diode: Construction, Operating Principle and IV Characteristic

Power Diode: Construction, Operating Principle and IV Characteristic

Basic structure of Power Diode: Power diode consists of three layers. Top layer is a heavily doped P+ layer. Middle layer is lightly doped n– layer and the last layer…

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